6^th All-Russian Conference

Gallium, aluminum and indium nitrides

Sections of the Booklet of an Extended Abstracts (pdf files)

Note, that papers in the book are bi-lingual.
Most of papers are composed of an Extended Abstract in Russian and Short Abstract in English (Title, authors, affiliation(s), 150-200 words of text). If an Extended abstract is in English, it is followed with a Short Abstract in Russian. No correction of English language was carried out by editors, spelling, grammar and content are under responsibility of respective authors.

TABLE OF CONTENT (English) (0.6MB)
BULK GROWTH AND EPITAXY (pp. 11-66, 3.8MB)
III-N BASED LEDs AND LDs: TECHNOLOGY AND PROPERTIES (pp. 67-139, 5.4MB)
III-N BASED HEMTs: TECHNOLOGY AND PROPERTIES (pp. 140-152, 1.2MB)
PROPERTIES OF III-N BASED LAYERS AND HETEROSTRUCTURES (pp. 153-213, 3.4MB)
III-N RELATED MATERIALS (pp. 214-223, 0.9MB)
MASS PRODUCTION OF III-N STRUCTURES (pp. 224-228, 0.8MB)
TABLE OF CONTENT (Russian) (0.9 MB)