6^th All-Russian Conference

Gallium, aluminum and indium nitrides

Ioffe Physico-Technical Institute of the RAS
St Petersburg Physics and Technology Centre for Research and Education of the RAS
in association with Agency for Science and Technology "Intellect"

June 18 - 20, 2008,
St Petersburg, Russia

Photo Report

Abstracts

In memory of V.A.Dmitriev

Sponsors Exhibitors UV Workshop

The 6-th All-Russian Conference "Nitrides of gallium, indium and aluminum: structures and devices" organized by Ioffe Institute will be held in St Petersburg on June 18-20, 2008. The annual Russian Conference on Gallium, Aluminum and Indium Nitrides organized for the first time in 1997 as a workshop aims to bring together scientific groups working in the field of III-nitrides in Russia. Despite the national character of the Russian III-N conference series, participants from all over the world are welcome. The official language of III-N 2008 is Russian but some presentations may be done in English.

SCOPE:

• Substrates for III-N epitaxial growth.
• Bulk material growth.
• Epitaxial growth.
• Optical, electronic and structural properties of III-N materials.
• Properties of quantum-size heterostructures based on III-N.
• Devices: growth and processing.
• Application of III-N based electronic and optoelectronic devices.

A large hall will host the technical exhibits and the poster sessions, providing ample occasions for contacts between scientists and companies active in the field. If you are interested in advertising your company, products or services, or in sponsoring the conference, please contact the Organizing Committee.

Deadlines for preliminary registration and abstracts submission, as well as guidelines for abstract preparation will be given in the second announcement soon.

To get a preliminary registration and visa support as well as for any additional information foreign participants should contact Organizing Committee by as soon as possible.