On January 6, 2008 Dr. Vladimir Dmitriev has suddenly died being 53 years old. He was world famous scientist, our colleague, and good man.
His scientific life was always closely related with wide-bandgap semiconductors, firstly with SiC, and since 1990 with III-N compounds. The research has been performed in Russia in Ioffe Institute in Wide Band Gap Research Team headed by Dr. Dmitriev and in USA in TDI Inc. established by him.
Many of scientific results obtained by teams headed by Dr. Dmitriev, previously considered as fundamentally impossible, however, after publication became wide known and these results deeply effect the development of III-N materials technology.
Dr. Vladimir Dmitriev was the one of founders and organizers of All-Russian workshops and conferences "Gallium, aluminum and indium nitrides". Also he was the first and continual sponsor.

Organizing Committee of 6 All-Russian Conference "Gallium, aluminum and indium nitrides" are dutiful to organize in the frame of the Conference the Special Session, in memory of Vladimir Dmitriev. During this session the scientific presentation devoted to the growth of III-nitrides by HVPE will be done by Vladimir's disciples and colleagues.